Journal
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS
Volume 68, Issue 1, Pages 12-18Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TCSII.2020.3040425
Keywords
Magnetic tunneling; Sensors; Random access memory; Resistance; Arrays; Phase change random access memory; Junctions; Magnetic tunnel junction; offset tolerance; read disturbance; read yield; reference scheme; sensing circuit; sense amplifier; spin-transfer-torque MRAM; yield estimation
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Funding
- National Research Foundation of Korea (NRF) - Korea Government (MSIT) [2020R1F1A1060395]
- National Research Foundation of Korea [2020R1F1A1060395] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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This brief reviews the development of STT-MRAM sensing technology over the past 20 years from a circuit design perspective, categorizing various sensing schemes and discussing key breakthroughs. Overall, the review aims to facilitate further enhancement of STT-MRAM sensing technology to fulfill its potential as a universal memory.
This brief presents a review of developments in spin-transfer-torque magnetoresistive random access memory (STT-MRAM) sensing over the past 20 years from a circuit design perspective. Various sensing schemes are categorized and described according to the data-cell variation-tolerant characteristics, pre-amplifiers, and offset tolerance. Key breakthroughs for achieving the optimal reference scheme, read disturbance prevention, read energy reduction, accurate yield estimation, and overcoming other non-idealities are discussed. This review is intended to facilitate further enhancement of STT-MRAM sensing in advanced technology nodes, thereby fulfilling STT-MRAM's potential as a universal memory.
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