A New Simulation Approach of Transient Response to Enhance the Selectivity and Sensitivity in Tunneling Field Effect Transistor-Based Biosensor

In this work, a new simulation approach of transient analysis on single cavity dielectric-modulated (DM) p-type of tunnel field-effect transistor (TFET) is examined for biosensing applications. The device operation and performance are investigated using the 2D device simulator and results are well-calibrated with experimental data. In this work, we have examined DC transfer characteristics, the transient response of drain current, drain current sensitivity (S), and selectivity (Delta S). Focussing more on the transient results, we have obtained maximum sensitivity of orders greater than 10(8) for APTES biomolecule with respect to air and a significant selectivity value in orders of 10(3) for APTES with respect to Biotin biomolecule. The performance of the device in terms of selectivity can be further improved (similar to 10(4)) by optimizing the back-gate bias, and therefore, the impact of back-gate bias has been analysed. The results for charged biomolecules and partially filled cavity are further investigated & highlighted. The DMp-TFET biosensor shows a significant improvement in the results with the transient response for biosensing applications with the feasibility of operating at low voltages (gate voltage of -2.0 V, drain voltage of -0.5 V and back gate voltage 0 to 0.5 V).

Automated summary

In this study, a new simulation approach for transient analysis of a single cavity dielectric-modulated p-type tunnel field-effect transistor (TFET) for biosensing applications was investigated. The device performance was examined using a 2D device simulator, with results calibrated against experimental data. The study focused on DC transfer characteristics, transient response of drain current, sensitivity, and selectivity, showing significant improvement in results for biosensing applications.