Vertical GaN-Based Temperature Sensor by Using TiN Anode Schottky Barrier Diode

Vertical GaN Schottky barrier diode was fabricated as temperature sensor by using a thermally stable TiN anode. The current-voltage characteristics of the diode measured at various temperature present a zero-temperature coefficient (ZTC) bias point of approximately 0.6 V. At the voltage below the ZTC bias point (sub-threshold region), the forward voltage at a fixed current decreases linearly with the increasing temperature, resulting in a sensitivity of approximately 1.3 mV/K. In the reversely biased region, the leakage current also presents temperature-dependent behavior with a sensitivity of approximately 19.7 mA/K regardless of the bias. Those results can be interpreted by the thermionic emission model.

Automated summary

The vertical GaN Schottky barrier diode, fabricated as a temperature sensor using a thermally stable TiN anode, displays a zero-temperature coefficient bias point and a linear decrease in forward voltage with increasing temperature in the sub-threshold region. Additionally, the leakage current in the reversely biased region shows temperature-dependent behavior with a sensitivity of approximately 19.7 mA/K regardless of the bias. These results can be explained by the thermionic emission model.