Journal
IEEE ELECTRON DEVICE LETTERS
Volume 41, Issue 12, Pages 1790-1793Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2020.3030641
Keywords
Ultra-wide bandgap; CuO nanostructures; solar-blind photo-detection; ultraviolet-C; solution process
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Funding
- Department of Science and Technology (DST) [SR/NM/NT-01/2016]
- DST, India, under DST INSPIRE Faculty program [DST/INSPIRE/04/2016/001865]
- Council of Scientific and Industrial Research, India
- Micro and Nano Characterization Facility CeNSE, IISc Bangalore
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High-performancesolar-blind photo-detection using highly transparent CuO nanostructures (with a bandgap of 4.15 eV) has been demonstrated. The device shows the dark current as low as 0.2 nA (-10 V applied bias) and no signature of breakdown even at a bias up to +/- 175 V. The device has shown record photo-sensitivity of 610, photo-responsivity of 14.02 A/W and photo-detectivity of 3.59 x 10(13) cmHz(1/2)W(-1) in the UV-C region. The ratio of photo-responsivities at 210 nm and 500 nm i.e. R-210/R-500 was found to be 5.05 x 10(4). Additionally, the device has shown external quantum efficiency of similar to 5900 % at 210 nm excitation. This letter will establish CuO as one of the most promising ultra-wide bandgap semiconductors for cost-effective solar blind photo-detection.
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