Diamond semiconductor performances in power electronics applications

This paper proposes a system-level comparison between diamond and silicon carbide (SiC) power devices. It highlights the benefits of diamond semiconductors for power electronics applications. Actual diamond power devices were fabricated and characterised (DC, AC small-signal, large-signal power switching in a buck converter). Models of the diamond devices are discussed based on the experimental data, and the expected performances of the future diamond semiconductors in power converters are presented. These performances are compared to the commercialised SiC Schottky diodes for a given application. Our analysis shows that diamond devices can be used to increase the performance of power converters, especially at high temperatures. We demonstrate that for a junction temperature of 450 K, diamond semiconductors can divide the semiconductor losses and heatsink volume by three, in comparison with SiC devices. We also demonstrate that the switching frequency with diamond devices can be five times higher than with SiC devices, with lower total semiconductor losses and smaller heatsink in diamond-based power converters. This system-level analysis clearly shows the future improvements in the efficiency and power densities of power converters thanks to diamond power devices. The need for management of the specific junction temperature, which is required in order to exploit all of the properties of diamonds, is demonstrated and discussed.