4.4 Article

A new method of generating Ga slope in Cu(In,Ga)Se2 film by controlling Se content in a multi-stacked precursor

Journal

CURRENT APPLIED PHYSICS
Volume 21, Issue -, Pages 147-154

Publisher

ELSEVIER
DOI: 10.1016/j.cap.2020.10.018

Keywords

CIGS film; (In,Se)/(Cu,Ga) precursor; Morphology; Ga slope; Se content

Funding

  1. Technology development program to solve climate changes of the National Research Foundation, South Korea [2016M1A2A2936757]
  2. Korea Institute of Energy Technology Evaluation and Planning, South Korea [20163030013690]
  3. Korea Evaluation Institute of Industrial Technology (KEIT) [20163030013690] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)

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By designing a precursor with a rich Se layer on top and a deficient Se layer on the bottom, it is possible to achieve a CIGS film with a non-zero Ga surface and the desired slope, leading to enhanced cell performance.
An appropriate Ga slope is required in Cu(In,Ga)Se-2 (CIGS) film to enhance the cell performance of CIGS thinfilm solar cells. In the conventional three-stage-co-evaporation process, the Ga slope was obtained by controlling Ga/In flux during deposition process. However, in two-step process, where a precursor was deposited first and then annealed in a Se environment for mass production, the desirable Ga slope was not achievable with the Ga/In flux control. We observed that the Ga/(Ga + In) ratio was nearly flat in CIGS film for Se-rich precursor and the ratio was nearly zero at surface and very high on bottom side of CISG film for Se-deficient precursor. We were able to generate a CIGS film with a Ga non-zero Ga surface and desired slope in the bulk by devising a precursor with Se-rich layer on top and Se-deficient layer on bottom, resulting in the enhancement of Cell performance.

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