Stoichiometry dependent changes in the optical properties and nanoscale track formation of PECVD grown a-SiNx:H thin films upon 100 MeV Au8+ ion irradiation

a-SiNx:H thin films of different stoichiometry grown by PECVD were subjected to irradiation by 100 MeV Au8+ ions with various fluences to understand the effect of stoichiometry on properties of thin films upon irradiation. Ellipsometry and UV-Vis study suggest the variation in the refractive index of thin films with fluence. The evolution of Hydrogen due to irradiation is quantified with the help of ERDA. RBS was probed to study the change in thin films' composition upon irradiation, which further helps understand the change in thin films' optical properties. Quenching of photoluminescence in the films with all stoichiometries was also observed due to ion irradiation. X-TEM images show the formation of discontinuous ion tracks of radius 2.5 nm in the film closer to silicon nitride stoichiometry. However, Si rich film does not show the clear formation of tracks. Results are explained in the framework of the Thermal spike mechanism of ion-solid interaction.

Automated summary

The study investigated the effect of stoichiometry on a-SiNx:H thin films irradiated by 100 MeV Au8+ ions, revealing changes in refractive index, hydrogen evolution, composition, photoluminescence quenching, and ion track formation through ellipsometry, UV-Vis study, ERDA, RBS, and X-TEM. Results were interpreted within the framework of the Thermal spike mechanism of ion-solid interaction.