Related references
Note: Only part of the references are listed.Investigation of the p-GaN Gate Breakdown in Forward-Biased GaN-Based Power HEMTs
Andrea Natale Tallarico et al.
IEEE ELECTRON DEVICE LETTERS (2017)
High voltage trapping effects in GaN-based metal-insulator-semiconductor transistors
Gaudenzio Meneghesso et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2016)
Recessed-gate quasi-enhancement-mode AlGaN/GaN high electron mobility transistors with oxygen plasma treatment
Yun-Long He et al.
CHINESE PHYSICS B (2016)
Gate Reliability Investigation in Normally-Off p-Type-GaN Cap/AlGaN/GaN HEMTs Under Forward Bias Stress
M. Tapajna et al.
IEEE ELECTRON DEVICE LETTERS (2016)
Time-Dependent Failure of GaN-on-Si Power HEMTs With p-GaN Gate
Isabella Rossetto et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2016)
Forward Bias Gate Breakdown Mechanism in Enhancement-Mode p-GaN Gate AlGaN/GaN High-Electron Mobility Transistors
Tian-Li Wu et al.
IEEE ELECTRON DEVICE LETTERS (2015)
GaN-Based Metal-Insulator-Semiconductor High-Electron-Mobility Transistors Using Low-Pressure Chemical Vapor Deposition SiNx as Gate Dielectric
Mengyuan Hua et al.
IEEE ELECTRON DEVICE LETTERS (2015)
Phenomenon of Drain Current Instability on p-GaN Gate AlGaN/GaN HEMTs
Ting-Fu Chang et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2015)
Low-Loss and High-Voltage III-Nitride Transistors for Power Switching Applications
Masaaki Kuzuhara et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2015)
High-voltage normally OFF GaN power transistors on SiC and Si substrates
Oliver Hilt et al.
MRS BULLETIN (2015)
Time-dependent degradation of threshold voltage in AlGaN/GaN high electron mobility transistors
Ma Xiao-Hua et al.
CHINESE PHYSICS B (2014)
GaN MIS-HEMTs With Nitrogen Passivation for Power Device Applications
Shih-Chien Liu et al.
IEEE ELECTRON DEVICE LETTERS (2014)
A Survey of Wide Bandgap Power Semiconductor Devices
Jose Millan et al.
IEEE TRANSACTIONS ON POWER ELECTRONICS (2014)
Time- and Field-Dependent Trapping in GaN-Based Enhancement-Mode Transistors With p-Gate
Matteo Meneghini et al.
IEEE ELECTRON DEVICE LETTERS (2012)
Gate injection transistor (GIT) - A normally-off AlGaN/GaN power transistor using conductivity modulation
Yasuhiro Uemoto et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2007)
Share Paper
