Analysis on degradation mechanisms of normally-off p-GaN gate AlGaN/GaN high-electron mobility transistor*

The degradation mechanisms of enhancement-mode p-GaN gate AlGaN/GaN high-electron mobility transistor was analyzed extensively, by means of drain voltage stress and gate bias stress. The results indicate that: (i) High constant drain voltage stress has only a negligible impact on the device electrical parameters, with a slightly first increase and then decrease in output current; (ii) A negative shift of threshold voltage and increased output current were observed in the device subjected to forward gate bias stress, which is mainly ascribed to the hole-trapping induced by high electric field across the p-GaN/AlGaN interface; (iii) The analyzed device showed an excellent behavior at reverse gate bias stress, with almost unaltered threshold voltage, output current, and gate leakage current, exhibiting a large gate swing in the negative direction. The results are meaningful and valuable in directing the process optimization towards a high voltage and high reliable enhanced AlGaN/GaN high-electron mobility transistor.

Automated summary

In this study, the degradation mechanisms of enhancement-mode p-GaN gate AlGaN/GaN high-electron mobility transistor were extensively analyzed under different stress conditions. The results showed that the device exhibited different electrical characteristics under various stress conditions, indicating excellent performance under reverse gate bias stress. These findings are significant in guiding process optimization towards a high voltage and highly reliable enhanced AlGaN/GaN high-electron mobility transistor.