Journal
CHINESE PHYSICS B
Volume 30, Issue 1, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/1674-1056/abc546
Keywords
beta-Ga2O3 substrate; Schottky photodiode; solar-blind detection
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Funding
- BUPT Excellent Ph.D. Students Foundation [CX2020314]
- National Natural Science Foundation of China [61774019, 51572033, 51572241]
- Fund of State Key Laboratory of Information Photonics and Optical Communications (BUPT)
- Fundamental Research Funds for the Central Universities, China
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In this study, EFG-grown beta-Ga2O3-based Schottky photodiodes were reported, demonstrating low leakage current and high rectified ratio. The photodiode detector showed excellent performance at zero bias, indicating potential advancement in solar-blind photodetectors.
We report the edge-defined-film-fed (EFG)-grown beta-Ga2O3-based Schottky photodiodes. The device has a reverse leakage current of similar to nA and a rectified ratio of similar to 10(4) at +/- 5 V. In addition, the photodiode detector shows a dark current of 0.3 pA, a photo-responsivity (R) of 2.875 mA/W, a special detectivity (D*) of 10(10) Jones, and an external quantum efficiency (EQE) of 1.4% at zero bias, illustrating a self-powered operation. This work may advance the development of the Ga2O3-based Schottky diode solar-blind photodetectors.
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