Journal
CHEMISTRY OF MATERIALS
Volume 33, Issue 1, Pages 338-346Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acs.chemmater.0c03898
Keywords
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Funding
- National Key Research and Development Program of China [2016YFB0700702]
- National Basic Research Program of China [2015CB258400]
- National Natural Science Foundation of China [51402118, 51502101, 61674063]
- Foundation of Shenzhen Science and Technology Innovation Committee [JCYJ20180504170444967]
- FTEM tests from Analysis and Testing Center of Huazhong University of Science and Technology
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In this study, 2D alpha-MnTe nanosheets were successfully synthesized and exhibited excellent photoelectric properties in photodetectors. The thickness of the nanosheets can be controlled by adjusting reaction conditions, providing a new avenue for high-performance 2D optoelectronic devices.
Development of new two-dimensional (2D) materials with high performance photoelectronic properties is critical for the future multifunctional and miniaturized optoelectronic devices. alpha-MnTe is an room-temperature antiferromagnetic, direct band gap p-type semiconductor with unique energy band structure and may have high photoelectric conversion efficiency and excellent photoelectric properties. However, controlled synthesis of the 2D alpha-MnTe single crystal has rarely been achieved so far. In this paper, 2D alpha-MnTe nanosheets with a NiAs-type hexagonal structure, a stable 2D nonlayered p-type semiconductor, are prepared for the first time via van der Waals epitaxy chemical vapor deposition (CVD) on mica. The thickness of 2D alpha-MnTe can be well tuned by the reaction temperature and gas flow. The photoelectric performance of the photodetector based on the 2D alpha-MnTe nanosheet shows that the 2D alpha-MnTe nanosheet based photodetector has an ultrahigh photoresponsivity (2599 A/W), external quantum efficiency (EQE, 8.065 X 10(5)%), and excellent photodetectivity (3.32 X 10(12) jones) at an illumination of 400 nm @ 0.062 mW/cm(2) at 3 V, which is one of best performances of 2D material based photodetectors. Our work provides a new avenue to high performance 2D optoelectronic devices.
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