4.3 Article

Hot-carrier Separation Induced by the Electric Field of a p-n Junction between Titanium Dioxide and Nickel Oxide

Journal

CHEMISTRY LETTERS
Volume 50, Issue 2, Pages 374-377

Publisher

CHEMICAL SOC JAPAN
DOI: 10.1246/cl.200790

Keywords

Localized surface plasmon resonance; Hot-carrier; Nickel oxide

Funding

  1. JSPS KAKENHI [JP18H05205, JP18K05053, JP20H05083]
  2. Nanotechnology Platform (Hokkaido University)
  3. Dynamic Alliance for Open Innovation Bridging Human, Environment and Materials (Five-Star Alliance) of MEXT

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The fabrication of a NiO/Au-NPs/TiO2 structure with Au-NPs placed in the p-n junction revealed that the main driving force for hole separation came from the local electric field of the depletion layer in the p-n junction of TiO2 and NiO, rather than the Schottky junction of Au and NiO.
We fabricated a p-type nickel oxide (NiO)/gold nanoparticle (Au-NP)/n-type titanium dioxide (TiO2) structure in which Au-NPs are placed in the p-n junction of TiO2 and NiO. The photoelectric properties of NiO/Au-NPs/TiO2 suggest that the main driving force of the hole separation from Au-NPs to NiO is the local electric field of the depletion layer of the p-n junction of TiO2 and NiO rather than the Schottky junction of Au and NiO.

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