4.7 Article

The effect of fullerene layer on the aggregates formation in amyloid beta Langmuir-Blodgett films

Journal

APPLIED SURFACE SCIENCE
Volume 537, Issue -, Pages -

Publisher

ELSEVIER
DOI: 10.1016/j.apsusc.2020.147800

Keywords

Amyloid beta; Langmuir-Blodgett; Buckminster fullerene; Peptides secondary structures

Funding

  1. Romanian Ministry of Education and Research through National Core Founding Program [PN19-03, 21N/08.02.2019]

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This study investigates the impact of carbon nanomaterials and lipids on the aggregation properties of the amyloid beta/Aβ(1-42) layers, showing that the presence of cholesterol inhibits fibril formation and the developed structures are correlated with the surface characteristics of the films.
The investigation of the effect of carbon nanomaterials and lipids on the aggregation particularities of the amyloid beta/A beta(1-42) layers is important for understanding the generation mechanism of neuronal disorder and how it can be inhibited. Additionally, amyloids are nanomaterials with a wide area of potential applications from nanotechnology to biotechnology. This paper presents a study about the preparation of A beta(1-42) layer by two different methods, Langmuir-Blodgett (L-B) and drop cast (DC), on Si and Si covered by a layer of Buckminster fullerene, C-60, and on the effect of fullerene layer or/and cholesterol (Ch) on the generation of A beta(1-42) secondary structure forms, relevant for specific applications. AFM, SEM FTIR and Raman analysis offered details about the layer surface topography, morphology and particularities of the secondary structure generated in the process of A beta(1-42) molecules aggregation. This study showed that the presence of Ch inhibited the formation of fibrils in A beta(1-42) film deposited by L-B on Si covered by C-60 The structures developed during aggregation were correlated with the topography and roughness of the films. The presence of Ch determined a decrease in roughness for L-B film and increase in roughness for DC film deposited on Si covered by C-60 layer.

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