Cavity resonance tunability of porous silicon microcavities by Ar+ ion irradiation

Present work reports the effect of low-energy Ar+ ion beam irradiation on the optical properties and surface morphology of porous silicon (PSi) based optical microcavities. These microcavities were realized by an active lambda/2 spacer layer sandwiched between two Distributed Bragg Reflectors fabricated by galvanostatic electro- chemical etching. Low-energy 10 keV Ar+ ions at various fluences were used for this irradiation study for these microcavities and characterized. The peak in the reflectance spectra of resonant cavity shows a red-shift after ion irradiation. These experimental observations are in good agreement with transfer matrix simulations. The Raman studies show that the crystalline Si is modified in nanostructured PSi and subsequently, the structural features of Si-Si and Si-O bonds. The simulated depth profiles suggest that the penetration of Ar+ ion is limited to top two PSi layers and the reduction of effective refractive index of these two layers. These experimental findings, analytical simulations, and cavity modelling provide the evidence of resonent cavity peak tunability, optical field intensity modulation, and photon confinement within the microcavity. This approach could be useful to tune the optical properties of PSi and an effective method for producing widely tunable optical structures in Si-based photonic architectures.

Automated summary

In this study, low-energy Ar+ ion beam irradiation on PSi microcavities resulted in a red-shift in the reflectance spectra of resonant cavities and modification of crystalline silicon structure. Experimental findings were in agreement with simulations, providing evidence for tuning optical properties and photon confinement within the microcavity.