In-situ nanoscale characterization of composition and structure during formation of ultrathin nickel silicide

We characterize composition and structure of ultrathin nickel silicide during formation from 3 nm Ni films on Si (100) using in-situ high-resolution ion scattering and high-resolution transmission electron microscopy. We show the transition to occur in discrete steps, in which an intermediate phase is observed within a narrow range of temperature from 230 degrees C to 290 degrees C. The film composition of this intermediate phase is found to be 50% Ni:50% Si, without evidence for long-range structure, indicating the film to be a homogeneous monosilicide NiSi phase. The final phase is resemblant of the cubic disilicide NiSi2, but with slightly off-stoichiometric composition of 38% Ni and 62% Si. Along the [100] axis, the lattices of the film and the substrate are found in perfect alignment. Due to the epitaxial growth of the silicide, a contraction of the c lattice constant of the film by 0.7-1% is detected.

Automated summary

The study characterizes the composition and structure of ultrathin nickel silicide formed from 3 nm nickel films on silicon (100) through in-situ high-resolution ion scattering and high-resolution transmission electron microscopy. It shows a transition occurring in discrete steps, with an intermediate phase observed between 230 degrees C and 290 degrees C. The film composition of the intermediate phase is found to be 50% Ni:50% Si, while the final phase resembles cubic disilicide NiSi2 with a slightly off-stoichiometric composition of 38% Ni and 62% Si. The epitaxial growth of the silicide results in a contraction of the film's c lattice constant by 0.7-1%.