Related references
Note: Only part of the references are listed.Review of recent progresses on gallium nitride transistor in power conversion application
Jiangbo Tian et al.
INTERNATIONAL JOURNAL OF SUSTAINABLE ENERGY (2020)
Effects of microstructure and growth conditions on quantum emitters in gallium nitride
Minh Nguyen et al.
APL MATERIALS (2019)
Double-slit photoelectron interference in strong-field ionization of the neon dimer
Maksim Kunitski et al.
NATURE COMMUNICATIONS (2019)
Hydride vapor phase epitaxy for gallium nitride substrate
Jun Hu et al.
JOURNAL OF SEMICONDUCTORS (2019)
Room temperature solid-state quantum emitters in the telecom range
Yu Zhou et al.
SCIENCE ADVANCES (2018)
Bright room temperature single photon source at telecom range in cubic silicon carbide
Junfeng Wang et al.
NATURE COMMUNICATIONS (2018)
Photophysics of GaN single-photon emitters in the visible spectral range
Amanuel M. Berhane et al.
PHYSICAL REVIEW B (2018)
Room-temperature single-photon emission from zinc oxide nanoparticle defects and their in vitro photostable intrinsic fluorescence
Kelvin Chung et al.
NANOPHOTONICS (2017)
Gallium nitride grown by molecular beam epitaxy at low temperatures
A. M. Jeffries et al.
THIN SOLID FILMS (2017)
Bright Room-Temperature Single-Photon Emission from Defects in Gallium Nitride
Amanuel M. Berhane et al.
ADVANCED MATERIALS (2017)
Quantum emission from hexagonal boron nitride monolayers
Toan Trong Tran et al.
NATURE NANOTECHNOLOGY (2016)
Progress in periodically oriented III-nitride materials
Jennifer Hite
JOURNAL OF CRYSTAL GROWTH (2016)
Fabrication and Photoluminescence Study of Large-Area Ordered and Size-Controlled GeSi Multi-quantum-well Nanopillar Arrays
Yuwen Jiang et al.
NANOSCALE RESEARCH LETTERS (2016)
GaN-based light-emitting diodes on various substrates: a critical review
Guoqiang Li et al.
REPORTS ON PROGRESS IN PHYSICS (2016)
Fabrication and Photoluminescence Study of Large-Area Ordered and Size-Controlled GeSi Multi-quantum-well Nanopillar Arrays
Yuwen Jiang et al.
NANOSCALE RESEARCH LETTERS (2016)
Single-photon emitting diode in silicon carbide
A. Lohrmann et al.
NATURE COMMUNICATIONS (2015)
Determination of GaN polarity on periodically oriented surfaces
Josephus D. Ferguson et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (2015)
Single photon emission from ZnO nanoparticles
Sumin Choi et al.
APPLIED PHYSICS LETTERS (2014)
Diamond Nanophotonics
Igor Aharonovich et al.
ADVANCED OPTICAL MATERIALS (2014)
Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays
Steven P. DenBaars et al.
ACTA MATERIALIA (2013)
Elastic, anelastic, and piezoelectric coefficients of GaN
N. Nakamura et al.
JOURNAL OF APPLIED PHYSICS (2012)
Temperature-dependent forward gate current transport in atomic-layer-deposited Al2O3/AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor
Z. H. Liu et al.
APPLIED PHYSICS LETTERS (2011)
Fabrication of surface metal nanoparticles and their induced surface plasmon coupling with subsurface InGaN/GaN quantum wells
Che-Wei Huang et al.
NANOTECHNOLOGY (2011)
Vertical nanopillars for highly localized fluorescence imaging
Chong Xie et al.
PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA (2011)
Nonpolar and Semipolar III-Nitride Light-Emitting Diodes: Achievements and Challenges
Hisashi Masui et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2010)
High density patterned quantum dot arrays fabricated by electron beam lithography and wet chemical etching
V. B. Verma et al.
APPLIED PHYSICS LETTERS (2008)
Nondestructive analysis of threading dislocations in GaN by electron channeling contrast imaging
Y. N. Picard et al.
APPLIED PHYSICS LETTERS (2007)
Electron channeling contrast imaging of atomic steps and threading dislocations in 4H-SiC
Y. N. Picard et al.
APPLIED PHYSICS LETTERS (2007)
Status and future of high-power light-emitting diodes for solid-state lighting
Michael R. Krames et al.
JOURNAL OF DISPLAY TECHNOLOGY (2007)
Defects in GaN single crystals and homoepitaxial structures
JL Weyher et al.
JOURNAL OF CRYSTAL GROWTH (2005)
High-quality ultra-fine GaN nanowires synthesized via chemical vapor deposition
XH Chen et al.
ADVANCED MATERIALS (2003)
Dynamics of excitonic recombination and interactions in homoepitaxial GaN
KP Korona
PHYSICAL REVIEW B (2002)
Modeling of threading dislocation reduction in growing GaN layers
SK Mathis et al.
JOURNAL OF CRYSTAL GROWTH (2001)
Yellow luminescence and Fermi level pinning in GaN layers
I Shalish et al.
APPLIED PHYSICS LETTERS (2000)