Journal
APPLIED PHYSICS LETTERS
Volume 117, Issue 25, Pages -Publisher
AIP Publishing
DOI: 10.1063/5.0031464
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Funding
- Air Force Office of Scientific Research [FA9550-18-1-0507, FA9550-18-1-0360, FA9550-18-1-0332]
- National Science Foundation [DMR 1808715, ECCS 1810096, DMR 1420645]
- Swedish Governmental Agency for Innovation Systems (VINNOVA) under Competence Center Program [2016-05190]
- Swedish Research Council VR [2016-00889]
- Swedish Foundation for Strategic Research [RIF14-055, EM16-0024]
- Knut and Alice Wallenbergs Foundation
- Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linkoping University, Faculty Grant SFO Mat LiU [2009-00971]
- Leibniz Association, Germany
- University of Nebraska Foundation
- J. A. Woollam Foundation
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The quasi-static anisotropic permittivity parameters of electrically insulating beta gallium oxide (beta -Ga2O3) were determined by terahertz spectroscopy. Polarization-resolved frequency domain spectroscopy in the spectral range from 200GHz to 1THz was carried out on bulk crystals along different orientations. Principal directions for permittivity were determined along crystallographic axes c and b and reciprocal lattice direction a *. No significant frequency dispersion in the real part of dielectric permittivity was observed in the measured spectral range. Our results are in excellent agreement with recent radio frequency capacitance measurements as well as with extrapolations from recent infrared measurements of phonon mode and high-frequency contributions and close the knowledge gap for these parameters in the terahertz spectral range. Our results are important for applications of beta -Ga2O3 in high-frequency electronic devices.
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