Journal
APPLIED PHYSICS LETTERS
Volume 118, Issue 2, Pages -Publisher
AIP Publishing
DOI: 10.1063/5.0033703
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Funding
- Natural Sciences and Engineering Research Council of Canada (NSERC)
- Ontario Centres for Excellence (OCE), Canada
- Canada Foundation of Innovation (CFI)
- University of Waterloo
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The experimental results show that surface defects play an important role in GaN/InGaN micro-LEDs, with temperature and voltage affecting tunneling current. Some potential approaches to suppress surface defects are proposed and a revised external quantum efficiency model is introduced.
Two GaN/InGaN micro-light-emitting diodes (micro-LEDs) grown on the same substrate with mesa sizes of 20 mu m and 100 mu m are measured from 100K to 300K to investigate the role that surface defects play in device efficiency. The experimental results show that the surface defect-assisted tunneling process dominates the nonradiative recombination of GaN/InGaN micro-LEDs at 100K, while the surface defect-assisted Shockley-Read-Hall recombination becomes dominant at room temperature. The temperature- and voltage-dependent tunneling current for both devices is calculated, which shows that the surface defect-assisted tunneling process is one of the major nonradiative recombination mechanisms in GaN/InGaN micro-LEDs with smaller mesa sizes at room temperature. A few potential approaches are proposed to suppress this surface defect-assisted tunneling recombination. The revised external quantum efficiency model is proposed to include the tunneling recombination effect and study the efficiency performance of GaN/InGaN micro-LEDs.
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