4.6 Article

Gradual magnetization switching via domain nucleation driven by spin-orbit torque

Journal

APPLIED PHYSICS LETTERS
Volume 118, Issue 3, Pages -

Publisher

AMER INST PHYSICS
DOI: 10.1063/5.0035667

Keywords

-

Funding

  1. National Key Research and Development Program of China (MOST) [2017YFA0206200]
  2. National Natural Science Foundation of China (NSFC) [12061131012, 51831012, 11974398, 11874409]
  3. Beijing Natural Science Foundation [Z201100004220006]
  4. Strategic Priority Research Program (B) of the Chinese Academy of Sciences (CAS) [XDB33000000]
  5. Russian Science Foundation [21-42-00041]
  6. Russian Ministry of Science and Higher Education [0657-2020-0013]
  7. Act 211 of the Government of the Russian Federation [02.A03.21.0011]
  8. Grant Program of the Russian President [MK-2281.2019.2]
  9. Youth Innovation Promotion Association, CAS [2020008]
  10. Russian Science Foundation [21-42-00041] Funding Source: Russian Science Foundation

Ask authors/readers for more resources

The study investigates gradual magnetization switching driven by spin orbit torque in a Pt/Co/MgO strip, and proposes a phenomenological model to describe the current dependence of magnetization and the dependence of the number of nucleation domains on applied current and magnetic field. The research results may contribute to the development of SOT devices in neuromorphic computing applications.
Gradual magnetization switching driven by spin orbit torque (SOT) is preferred for neuromorphic computing in a spintronic manner. Here we have applied focused ion beam to selectively illuminate patterned regions in a Pt/Co/MgO strip with perpendicular magnetic anisotropy, soften the illuminated areas, and realize the gradual switching by a SOT-driven nucleation process. It is found that a large in-plane field is helpful to reduce the nucleation barrier, increase the number of nucleated domains and intermediate states during the switching progress, and finally flatten the switching curve. We proposed a phenomenological model for descripting the current dependence of magnetization and the dependence of the number of nucleation domains on the applied current and magnetic field. This study may promote the birth of SOT devices applicable in neuromorphic computing applications. Published under license by AIP Publishing.

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