Journal
APPLIED PHYSICS LETTERS
Volume 117, Issue 25, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/5.0027480
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Funding
- ONR [N00014-20-1-2481]
- Vannevar Bush Faculty Fellowship ONR [N00014-15-2847]
- U.S. Department of Energy (DOE), Office of Science, Office of Basic Energy Science (BES) [DE-FG02-06ER46327]
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We describe a method to control the insulator-metal transition at the LaAlO3/SrTiO3 interface using ultra-low-voltage electron beam lithography. Compared to previous reports that utilize conductive atomic force microscope (c-AFM) lithography, this approach can provide comparable resolution (similar to 10nm) at write speeds (10mm/s) that are up to 10000x faster than c-AFM. The writing technique is nondestructive, and the conductive state is reversible via prolonged exposure to air. Transport properties of representative devices are measured at milli-Kelvin temperatures, where superconducting behavior is observed. We also demonstrate the ability to create conducting devices on graphene/LaAlO3/SrTiO3 heterostructures. The underlying mechanism is believed to be closely related to the same mechanism regulating c-AFM-based methods.
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