Journal
APPLIED PHYSICS LETTERS
Volume 118, Issue 1, Pages -Publisher
AIP Publishing
DOI: 10.1063/5.0032790
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Funding
- National Natural Science Foundation of China [11804190]
- Shandong Provincial Natural Science Foundation of China [ZR2019QA011, ZR2019MEM013]
- Shandong Provincial Key Research and Development Program (Major Scientific and Technological Innovation Project) [2019JZZY010302]
- Shandong Provincial Key Research and Development Program [2019RKE27004]
- Qilu Young Scholar Program of Shandong University
- Taishan Scholar Program of Shandong Province
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This study demonstrates the existence of out-of-plane ferroelectricity in elemental 2D lattices such as phosphorene, arsenene, and antimonene, attributing their sizable out-of-plane polarizations to the unique stacking pattern causing charge redistribution. The findings also show that upon hole doping, these materials can exhibit multiferroicity, indicating a strong coupling between ferroelectricity and ferromagnetism.
Developing out-of-plane ferroelectricity in a two-dimensional (2D) lattice is becoming increasingly important due to its high potential for miniaturized device applications. Current research efforts for 2D out-of-plane ferroelectrics mainly focus on compounds, while 2D elemental material-based ferroelectrics have been rarely explored. Herein, we show first-principles evidence of the existence of out-of-plane ferroelectricity in elemental 2D lattices, bilayer phosphorene, arsenene, and antimonene, which can be easily synthesized in a controllable manner in experiments. Our results reveal that their sizable out-of-plane polarizations are attributed to the charge redistribution caused by the unique stacking pattern. Upon doping holes, bilayer phosphorene and arsenene are shown to be multiferroic, presenting a strong coupling between ferroelectricity and ferromagnetism. Moreover, reversible spin texture induced by ferroelectric switching is achieved in all these three systems. These findings thereby not only broaden the class of 2D out-of-plane ferroelectrics but also enable future multifunctional nanodevice designs.
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