Related references
Note: Only part of the references are listed.Round-robin test of the photoluminescence method after electron irradiation for quantifying low-level carbon in silicon
Michio Tajima et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2020)
Anomalous excitation-power dependence of band-edge emission in Si involving radiation-induced defects
Shota Asahara et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2020)
Detection limit of carbon concentration measurement in Si for photoluminescence method after electron irradiation
Yuta Satake et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2020)
Origin of room-temperature photoluminescence around C-line in electron-irradiated Si and its applicability for quantification of carbon
Michio Tajima et al.
APPLIED PHYSICS EXPRESS (2018)
Determination of C concentration in P-doped n-type Czochralski-grown Si crystals by liquid N temperature photoluminescence after electron irradiation
Yoichiro Ishikawa et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2018)
Determination of Low C Concentration in Czochralski-Grown Si for Solar Cell Applications by Liquid-N-Temperature Photoluminescence After Electron Irradiation
Michio Tajima et al.
JOURNAL OF ELECTRONIC MATERIALS (2018)
Determination of low carbon concentration in Czochralski-grown Si crystals for solar cells by luminescence activation using electron irradiation
Hirotatsu Kiuchi et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2017)
Quantification of C in Si by photoluminescence at liquid N temperature after electron irradiation
Michio Tajima et al.
APPLIED PHYSICS EXPRESS (2017)
Quantitative analysis of carbon impurity concentration in silicon epitaxial layers by luminescence activation using carbon ion implantation and electron irradiation
Satoko Nakagawa et al.
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 11, NO 11-12 (2014)
Share Paper
