Free-to-bound emission from interstitial carbon and oxygen defects (CiOi) in electron-irradiated Si

We determined the entire spectral shape of a broad band around 0.8 eV, previously termed the C08-band, which was observed commonly in Si by room-temperature photoluminescence after electron irradiation. The band has a peak at 0.77 0.01 eV with long tails on both sides. We identified that the C08-band has the same origin as the C-line and occurs as a result of the recombination between a free electron and a hole bound by the deep trap due to the interstitial C and O defects (CiOi). The long tails were explained by the superposition of phonon sidebands. (c) 2021 The Japan Society of Applied Physics

Automated summary

The study identified the spectral shape of the C08-band in silicon commonly observed after electron irradiation at room temperature, with a peak at 0.77 eV and long tails on both sides, sharing the same origin as the C-line. The long tails were explained by the superposition of phonon sidebands.