4.4 Article

Low-Energy Spin Precession in the Molecular Field of a Magnetic Thin Film

Journal

ANNALEN DER PHYSIK
Volume 533, Issue 2, Pages -

Publisher

WILEY-V C H VERLAG GMBH
DOI: 10.1002/andp.202000470

Keywords

hot electrons; magnetic tunnel transistors; molecular fields; spin precession; spintronics

Funding

  1. ANR SpinPress [ANR-09-BLAN-0076]
  2. FEDER (EU)
  3. French PIA project Lorraine Universite d'Excellence [ANR-15-IDEX-04-LUE]
  4. Region Grand Est
  5. Metropole Grand Nancy
  6. ICEEL
  7. Agence Nationale de la Recherche (ANR) [ANR-09-BLAN-0076] Funding Source: Agence Nationale de la Recherche (ANR)

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In the molecular field of magnetic thin films, electronic spin precession and filtering were measured for electrons injected with energies between 0.8 and 1.1 eV. While filtering angles matched previously reported values, spin precession angles were significantly smaller at lower energies, with key roles played by band structure and layer roughness according to ab initio calculations.
Electronic spin precession and filtering are measured in the molecular field of magnetic thin films. Lab-on-chip experiments allow injection of electrons with energies between 0.8 and 1.1 eV, an energy range not yet explored in spin precession experiments. While filtering angles agree with previous reported values measured at much higher electron energies, spin precession angles of 2.5 degrees in CoFe and 0.7 degrees in Co per nanometer film thickness could be measured which are 30 times smaller than those previously measured at 7 eV. On the basis of ab initio calculations, the results are explained and it is shown that the band structure and layer roughness are playing a key role at low energy.

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