Journal
ANGEWANDTE CHEMIE-INTERNATIONAL EDITION
Volume 60, Issue 10, Pages 5213-5219Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/anie.202011384
Keywords
charge transfer; donor/acceptor interactions; pi-stacked molecules; spiro structures; thermally activated delayed fluorescence
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Funding
- National Natural Science Foundation of China [51773141, 61961160731, 51873139]
- National Key R&D Programme of China [2016YFB0400700]
- Natural Science Foundation of Jiangsu Province of China [BK20181442]
- Collaborative Innovation Centre of Suzhou Nano Science & Technology (Nano-CIC)
- Priority Academic Programme Development of Jiangsu Higher Education Institutions (PAPD)
- 111 Project
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Multi-layer pi-stacked emitters based on spatially confined D/A/D patterns have been developed to achieve high-efficiency TADF. Dual donor moieties and a single acceptor moiety are introduced to form 3D emitters, resulting in high PLQYs, small Delta E-ST, and fast RISC processes. Devices based on these emitters exhibit maximum EQEs higher than their D/A-type analogues.
Multi-layer pi-stacked emitters based on spatially confined donor/acceptor/donor (D/A/D) patterns have been developed to achieve high-efficiency thermally activated delayed fluorescence (TADF). In this case, dual donor moieties and a single acceptor moiety are introduced to form two three-dimensional (3D) emitters, DM-BD1 and DM-BD2, which rely on spatial charge transfer (CT). Owing to the enforced face-to-face D/A/D pattern, effective CT interactions are realized, which lead to high photoluminescence quantum yields (PLQYs) of 94.2 % and 92.8 % for the two molecules, respectively. The resulting emitters exhibit small singlet-triplet energy splitting (Delta E-ST) and fast reverse intersystem crossing (RISC) processes. Maximum external quantum efficiencies (EQEs) of 28.0 % and 26.6 % were realized for devices based on DM-BD1 and DM-BD2, respectively, which are higher than those of their D/A-type analogues.
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