Ruddlesden-Popper-Phase Hybrid Halide Perovskite/Small-Molecule Organic Blend Memory Transistors

Controlling the morphology of metal halide perovskite layers during processing is critical for the manufacturing of optoelectronics. Here, a strategy to control the microstructure of solution-processed layered Ruddlesden-Popper-phase perovskite films based on phenethylammonium lead bromide ((PEA)(2)PbBr4) is reported. The method relies on the addition of the organic semiconductor 2,7-dioctyl[1]benzothieno[3,2-b]benzothiophene (C-8-BTBT) into the perovskite formulation, where it facilitates the formation of large, near-single-crystalline-quality platelet-like (PEA)(2)PbBr4 domains overlaid by a approximate to 5-nm-thin C-8-BTBT layer. Transistors with (PEA)(2)PbBr4/C-8-BTBT channels exhibit an unexpectedly large hysteresis window between forward and return bias sweeps. Material and device analysis combined with theoretical calculations suggest that the C-8-BTBT-rich phase acts as the hole-transporting channel, while the quantum wells in (PEA)(2)PbBr4 act as the charge storage element where carriers from the channel are injected, stored, or extracted via tunneling. When tested as a non-volatile memory, the devices exhibit a record memory window (>180 V), a high erase/write channel current ratio (10(4)), good data retention, and high endurance (>10(4) cycles). The results here highlight a new memory device concept for application in large-area electronics, while the growth technique can potentially be exploited for the development of other optoelectronic devices including solar cells, photodetectors, and light-emitting diodes.

Automated summary

Controlling the morphology of metal halide perovskite layers is crucial for optoelectronics manufacturing. A new strategy utilizing an organic semiconductor was proposed to promote the formation of large single-crystal domains in perovskite films, leading to transistors with unexpectedly large hysteresis windows. Material and device analysis, along with theoretical calculations, indicated a potential novel memory device concept for large-area electronics.