Emerging Light-Emitting Materials for Photonic Integration

The arrival of the information explosion era is urging the development of large-bandwidth high-data-rate optical interconnection technology. Up to now, the biggest stumbling block in optical interconnections has been the lack of efficient light sources despite significant progress that has been made in germanium-on-silicon (Ge-on-Si) and III-V-on-silicon (III-V-on-Si) lasers. 2D materials and metal halide perovskites have attracted much attention in recent years, and exhibit distinctive advantages in the application of on-chip light emitters. Herein, this Progress Report reviews the recent progress made in light-emitting materials with a focus on new materials, i.e., 2D materials and metal halide perovskites. The report briefly introduces the current status of Ge-on-Si and Ill-V-on-Si lasers and discusses the advances of 2D and perovskite light-emitting materials for photonic integration, including their optical properties, preparation methods, as well as the light sources based on these materials. Finally, challenges and perspectives of these emerging materials on the way to the efficient light sources are discussed.

Automated summary

The information explosion era is driving the development of large-bandwidth high-data-rate optical interconnection technology. The lack of efficient light sources has been a major hurdle in optical interconnections, but 2D materials and metal halide perovskites have emerged as promising candidates with distinctive advantages. Recent progress in light-emitting materials, including Ge-on-Si, III-V-on-Si lasers, and advancements in 2D and perovskite materials for photonic integration, are discussed in this report. Challenges and future prospects of these emerging materials in the development of efficient light sources are also addressed.