Journal
ACS NANO
Volume 14, Issue 12, Pages 17262-17272Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsnano.0c07297
Keywords
additive manufacturing; atomic layer deposition; electrohydrodynamic jet printing; area-selective deposition; printable electronics
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Funding
- National Science Foundation [1727918]
- College of Engineering at University of Michigan
- Department of Energy (DOE) EERE Postdoctoral Research Award
- Directorate For Engineering [1727918] Funding Source: National Science Foundation
- Div Of Civil, Mechanical, & Manufact Inn [1727918] Funding Source: National Science Foundation
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There is an increasing interest in additive nanomanufacturing processes, which enable customizable patterning of functional materials and devices on a wide range of substrates. However, there are relatively few techniques with the ability to directly 3D print patterns of functional materials with sub-micron resolution. In this study, we demonstrate the use of additive electrohydrodynamic jet (e-jet) printing with an average line width of 312 nm, which acts as an inhibitor for area-selective atomic layer deposition (AS-ALD) of a range of metal oxides. We also demonstrate subtractive e-jet printing with solvent inks that dissolve polymer inhibitor layers in specific regions, which enables localized AS-ALD within those regions. The chemical selectivity and morphology of e-jet patterned polymers towards binary and ternary oxides of ZnO, Al2O3, and SnO2 were quantified using X-ray photoelectron spectroscopy, atomic force microscopy, and Auger electron spectroscopy. This approach enables patterning of functional oxide semiconductors, insulators, and transparent conducting oxides with tunable composition, angstrom-scale control of thickness, and sub -gm resolution in the x-y plane. Using a combination of additive and subtractive e-jet printing with AS-ALD, a thin-film transistor was fabricated using zinc-tin-oxide for the semiconductor channel and aluminum-doped zinc oxide as the source and drain electrical contacts. In the future, this technique can be used to print integrated electronics with sub-micron resolution on a variety of substrates.
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