Journal
ACS NANO
Volume 14, Issue 12, Pages 16761-16769Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsnano.0c04801
Keywords
2D materials; photoluminescence; interlayer twist; transition metal dichalcogenides; transition metal oxides
Categories
Funding
- National Research Foundation under Competitive Research Program [NRF2015NRF-CRP001-015]
- NGS fellowship
- Mid-IR photonics project bridge funding from ODPRT [MIPS R-398-000-082-646]
- NUS
- NUSNNI general purpose account grant [IN-398-000-006-001]
- international atomic energy agency (IAEA) CRP [F11020]
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While direct bandgap monolayer 2D transition metal dichalcogenides (TMDs) have emerged as an important optoelectronic material due to strong light-matter interactions, their multilayer counterparts exhibit an indirect bandgap resulting in poor photon emission quantum yield. We report strong direct bandgap-like photoluminescence at similar to 1.9 eV from multilayer MoS(2 )grown on SrTiO3, whose intensity is significantly higher than that observed in multilayer MoS2/SiO2. Using high-resolution electron microscopy we observe interlayer twist and >8% increase in the van der Waals gap, which leads to weaker interlayer coupling. This affects the evolution of the band structure in multilayer MoS2 as probed by transient absorption spectroscopy, causing higher photo carrier recombination at the direct gap. Our results provide a platform that could enable multilayer TMDs for robust optical device applications.
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