Journal
ACS NANO
Volume 14, Issue 12, Pages 17543-17553Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsnano.0c08146
Keywords
In2Se3; coplanar p-n heterojunction; atomically thin ICs; light-induced conversion; Kelvin probe microscopy; Raman/PL mapping phototransistor
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Funding
- Technion by the Aly Kaufman Fellowship
- Israel Science Foundation (ISF) [1567/18]
- Taub Foundation
- Alon fellowship
- Israel Science Foundation [2549/17, 2171/17]
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The formation of lateral heterojunction arrays within two-dimensional (2D) crystals is an essential step to realize high-density, ultrathin electro-optical integrated circuits, although the assembling of such structures remains elusive. Here we demonstrated a rapid, scalable, and site-specific integration of lateral 2D heterojunction arrays using few-layer indium selenide (In2Se3). We use a scanning laser probe to locally convert In2Se3 into In2O3, which shows a significant increase in carrier mobility and transforms the metal-semiconductor junctions from Schottky to ohmic type. In addition, a lateral p-n heterojunction diode within a single nanosheet is demonstrated and utilized for photosensing applications. The presented method enables high-yield, site-specific formation of lateral 2D In2Se3-In2O3-based hybrid heterojunctions for realizing nanoscale devices with multiple advanced functionalities.
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