Journal
ACS APPLIED MATERIALS & INTERFACES
Volume 12, Issue 49, Pages 54955-54962Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsami.0c15724
Keywords
perovskite rare-earth nickelate thin film; ionic-electronic doping; proton diffusion; phase transition; electric-field-assisted hydrogenation
Funding
- JSPS KAKENHI [19H05055, 19K22129, 18H01871]
- Fund for the Promotion of Joint International Research (Fostering Joint International Research) [15KK0236]
- Kansai Research Foundation for Technology Promotion
- TEPCO Memorial Foundation
- SEI Group CSR Foundation
- Nanotechnology Platform Project (Nanotechnology Open Facilities in Osaka University) of MEXT, Japan [JPMXP09F20OS0008, JPMXP09S20OS0006]
- Grants-in-Aid for Scientific Research [19H05055, 19K22129, 18H01871] Funding Source: KAKEN
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The electric-field-assisted hydrogenation and corresponding resistance modulation of NdNiO3 (NNO) thin-film resistors were systematically studied as a function of temperature and dc electric bias. Catalytic Pt electrodes serve as triple-phase boundaries for hydrogen incorporation into a perovskite lattice. A kinetic model describing the relationship between resistance modulation and proton diffusion was proposed by considering the effect of the electric field during hydrogenation. An electric field, in addition to thermal activation, is demonstrated to effectively control the proton distribution along its gradient with an efficiency of similar to 22% at 2 X 10(5) V/m. The combination of an electric field and gas-phase annealing is shown to enable the elegant control of the diffusional doping of complex oxides.
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