Journal
ACS APPLIED MATERIALS & INTERFACES
Volume 12, Issue 49, Pages 54972-54979Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsami.0c16079
Keywords
MoS2; lattice mismatch; AlN; FET arrays; ALD
Funding
- National Key Research and Development Program of China [2017YFB0404100]
- National Natural Science Foundation of China [61974144]
- Key-Area Research and Development Program of Guangdong Province [2020B010169001]
- Science and Technology Foundation of Shenzhen [JCYJ20160226192033020]
- Open Project of State Key Laboratory of Functional Materials for Informatic
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Molybdenum disulfide (MoS2) has substantial application prospects in the field of electronic devices. The fabrication of devices of excellent quality based on MoS2 films is an important research direction. In this study, based on the atomic layer deposition technique, large-area MoS2 films were grown, and top-gate MoS2-based field-effect transistor arrays were fabricated on four substrates (AlN, GaN, sapphire, and SiO2). It was found that the interface defects that were introduced by lattice mismatch and roughness of the growth substrate could cause an exponential (10(2)) drop in mobility. Because of the small lattice mismatch and excellent surface quality, transistors on the AlN substrate have shown an enhanced mobility (10.45 cm(2)V(-1)s(-1)) compared to transistors on the other substrates. This study proves that the AlN substrate is a superior substrate for large-area and high-performance MoS2 film synthesis. This result can also be applied in higher-level microelectronic systems, such as in digital logic circuit design.
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