Journal
ACS APPLIED MATERIALS & INTERFACES
Volume 13, Issue 2, Pages 3033-3039Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsami.0c19768
Keywords
heterostructure; magnetoelectric effect; ferroelectric-controlled magnetism; d-orbital shifts; first-principles calculations
Funding
- ARC Discovery Project [DP190101607, DP200102546]
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The magnetoelectric effect can modulate the magnetism of a transition-metal-decorated graphene layer by ferroelectrically induced electronic transitions in an In2Se3 monolayer. This provides insights into ferroelectrically controlled magnetism in two-dimensional materials and opens up promising experimental avenues.
The magnetoelectric effect is a fundamental physical phenomenon that synergizes electric and magnetic degrees of freedom to generate distinct material responses like electrically tuned magnetism, which serves as a key foundation of the emerging field of spintronics. Here, we show by first-principles studies that ferroelectric (FE) polarization of an In2Se3 monolayer can modulate the magnetism of an adjacent transition-metal (TM)-decorated graphene layer via a ferroelectrically induced electronic transition. The TM nonbonding d-orbital shifts downward and hybridizes with carbon-p states near the Fermi level, suppressing the magnetic moment, under one FE polarization, but on reversed FE polarization this TM d-orbital moves upward, restoring the original magnetic moment. This finding of robust magnetoelectric effect in the TM-decorated graphene/In2Se3 heterostructure offers powerful insights and a promising avenue for experimental exploration of ferroelectrically controlled magnetism in two-dimensional (2D) materials.
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