Journal
ACS APPLIED MATERIALS & INTERFACES
Volume 13, Issue 7, Pages 9074-9080Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsami.0c12939
Keywords
graphene; barrier; perovskite; exciton quenching; light-emitting diodes
Funding
- National Research Foundation of Korea (NRF) - Korea government (Ministry of Science, ICT & Future Planning) [NRF-2016R1A3B1908431, 10079974]
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Graphene serves as an ionic diffusion barrier in PeLEDs to prevent the etching of ITO by acidic hole-injection layers, leading to increased photoluminescence lifetime and luminous current efficiency in optoelectronic devices.
Graphene is an optimal material to be employed as an ionic diffusion barrier because of its outstanding impermeability and chemical robustness. Indium tin oxide (ITO) is often used in perovskite light-emitting diodes (PeLEDs), and it can release indium easily upon exposure to the acidic hole-injection layer so that luminescence can be quenched significantly. Here, we exploit the outstanding impermeability of graphene and use it as a chemical barrier to block the etching that can occur in ITO exposed to an acidic hole-injection layer in PeLEDs. This barrier reduced the luminescence quenching that these metallic species can cause, so the photoluminescence lifetime of perovskite film was substantially higher in devices with ITO and graphene layer (87.9 ns) than in devices that had only an ITO anode (22.1 ns). Luminous current efficiency was also higher in PeLEDs with a graphene barrier (16.4 cd/A) than in those without graphene (9.02 cd/A). Our work demonstrates that graphene can be used as a barrier to reduce the degradation of transparent electrodes by chemical etching in optoelectronic devices.
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