Robust ferromagnetism in wafer-scale monolayer and multilayer Fe3GeTe2

Monolayer iron germanium telluride Fe3GeTe2, one of the typical two-dimensional ferromagnetic materials, hitherto, has only been studied by exfoliated micron-sized samples. We achieve high-quality wafer-scale growth of thin Fe(3)GeTe(2)films by molecular beam epitaxy, greatly expanding the types of characterization tools employable and providing the possibility for its integration in devices like consumer electronics. Thickness-dependent transport measurements are used to characterize and probe for magnetic order. Ferromagnetic states exist in 1-10 layer thick Fe3GeTe2, with Curie temperatures ranging from similar to 75 K in one layer samples to above 175 K in ten layer samples. A single ferromagnetic phase with significant magnetic anisotropy is revealed for all layer numbers. We submit the capability of synthesizing, wafer-scale Fe(3)GeTe(2)as an essential step towards its fulfillment in any applications involving magnetism, such as spintronics.