β-Ga2O3 nanoflakes/p-Si heterojunction self-powered photodiodes

For the first time in the literature, a p-n junction photodiode based on beta-Ga2O3 nanoflakes was fabricated on p-Si by two stage hydrothermal (nucleation and crystal growth) deposition method. The photodiode exhibited an excellent rectifying ratio of 1387 at +/- 10 V. The value of responsivity to ultraviolet (UV) light was 0.16 mA/W (at 0 V) and 17.1 A/W (at-10 V), respectively. The device showed a characteristic of a self-powered device. Furthermore, this study unveiled several advantages of usage of beta-Ga2O3 nanoflakes to boost the performance of self-powered photodiodes.