4.3 Article

Magnetic and electronic properties of a topological nodal line semimetal candidate: HoSbTe

Journal

PHYSICAL REVIEW MATERIALS
Volume 4, Issue 9, Pages -

Publisher

AMER PHYSICAL SOC
DOI: 10.1103/PhysRevMaterials.4.094203

Keywords

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Funding

  1. National Key Research and Development Program of China [2017YFA0302901, 2016YFA0300604]
  2. National Natural Science Foundation of China [11774399, 11674369, 11925408, 11921004, 11974395]
  3. Beijing Natural Science Foundation [Z180008]
  4. Beijing Municipal Science and Technology Commission [Z181100004218001]
  5. Strategic Priority Research Program of Chinese Academy of Sciences [XDB33000000]
  6. K. C. Wong Education Foundation [GJTD-2018-01]
  7. CAS Pioneer Hundred Talents Program

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We report the experimental and theoretical studies of a magnetic topological nodal line semimetal candidate HoSbTe. Single crystals of HoSbTe are grown from Sb flux, crystallizing in a tetragonal layered structure (space group: P4/nmm, no. 129), in which the Ho-Te bilayer is separated by the square-net Sb layer. The magnetization and specific heat present distinct anomalies at similar to 4 K related to an antiferromagnetic (AFM) phase transition. Meanwhile, with applying magnetic field perpendicular and parallel to the crystallographic c axis, an obvious magnetic anisotropy is observed. Electrical resistivity undergoes a bad-metal-like state below 200 K and reveals a plateau at about 8 K followed by a drop due to the AFM transition. In addition, with the first-principle calculations of band structure, we find that HoSbTe is a topological nodal line semimetal or a weak topological insulator with or without taking the spin-orbit coupling into account, providing a platform to investigate the interplay between magnetic and topological fermionic properties.

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