Journal
ACS ENERGY LETTERS
Volume 5, Issue 11, Pages 3352-3356Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsenergylett.0c01805
Keywords
-
Categories
Funding
- ExxonMobil
- Princeton Center for Complex Materials, a National Science Foundation (NSF)-MRSEC program [DMR-1420541]
- ONR [N00014191P0005]
- U.S. Department of Energy (DOE) [DE-AC36-08GO28308]
- U.S. Department of Energy's Office of Energy Efficiency and Renewable Energy (EERE) under the Solar Energy Technologies Office (SETO) [DE-FOA-0000990]
Ask authors/readers for more resources
The constituent ions of halide perovskite materials are mobile in the solid state and known to participate in reduction/oxidation reactions. Yet few parameters related to electrochemical processes occurring within devices have been carefully determined. Here, we characterize such reactions in model MAPbI(3) perovskite devices, and we quantify threshold voltages for key reactions. Gold is oxidized and mobilized under nitrogen, in the dark, at the MAPbI(3)/Au interface at 0.8 V. When this interface is buffered with the organic hole transport material (HTM), 2,2',7,7'-tetrakis(N,N-di-p-methoxyphenylamino)-9,9'-spirobifluorene, MAPbI(3) begins to degrade at 1.2 V; degradation liberates ions that subsequently enable Au migration. Thresholds are insensitive to MAPbI(3) thickness or choice of organic HTM or oxide cathode, which suggests that these reactions are driven electrochemically; the electric field across the device is less important. These results have profound implications for understanding in operando degradation pathways of optoelectronic perovskite devices that are varied in terms of interface structures, active material compositions, and ranges of external stressors.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available