Journal
SPIN
Volume 10, Issue 3, Pages -Publisher
WORLD SCIENTIFIC PUBL CO PTE LTD
DOI: 10.1142/S2010324720500174
Keywords
Spin-photodiode; refracting-facet; optical spin-injection; drift-diffusion equation
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Funding
- Japan Society for Promotion of Science (JSPS) [18H03878]
- MEXT
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A model for lateral-type refracting-facet spin-photodiodes based on ferromagnetic metal-insulator-semiconductor (FM-I-S) junctions is described. The model utilizes spin and charge drift-diffusion equations and spin-dependent tunneling equations which are simultaneously solved numerically in order to obtain a self-consistent solution. The model is used to analyze and optimize the refracting-facet spin-photodiode structure. The relation between the active layer thickness and the effective lifetime of photo-generated electrons is investigated. Results show that the optimum active layer thickness depends on both effective lifetimes of photo-generated electrons and spins. The influence of empty density-of-state of ferromangetic metals is also explored.
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