Journal
SCIENCE CHINA-MATERIALS
Volume 64, Issue 3, Pages 727-738Publisher
SCIENCE PRESS
DOI: 10.1007/s40843-020-1444-1
Keywords
ferroelectric memristor; multi-level storage; resistive switching; neuromorphic network; synaptic plasticity
Categories
Funding
- National Natural Science Foundation of China [61674050, 61874158]
- Outstanding Youth Project of Hebei Province [F2016201220]
- Outstanding Youth Cultivation Project of Hebei University [2015JQY01]
- Project of Science and Technology Activities for Overseas Researcher [CL 201602]
- Project of Distinguished Young of Hebei Province [A2018201231]
- Support Program for the Top Young Talents of Hebei Province [70280011807]
- Training and Introduction of High-level Innovative Talents of Hebei University [801260201300]
- Hundred Persons Plan of Hebei Province [E2018050004, E2018050003]
- Supporting Plan for 100 Excellent Innovative Talents in Colleges and Universities of Hebei Province [SLRC2019018]
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This study introduces a new ferroelectric memristor that utilizes polarized ferroelectric domains for multi-level storage and biological synapse function simulation, addressing the instability issue in traditional memristors.
Memristors are designed to mimic the brain's integrated functions of storage and computing, thus breaking through the von Neumann framework. However, the formation and breaking of the conductive filament inside a conventional memristor is unstable, which makes it difficult to realistically mimic the function of a biological synapse. This problem has become a main factor that hinders memristor applications. The ferroelectric memristor overcomes the shortcomings of the traditional memristor because its resistance variation depends on the polarization direction of the ferroelectric thin film. In this work, an Au/Hf0.5Zr0.5O2/p(+)-Si ferroelectric memristor is proposed, which is capable of achieving resistive switching characteristics. In particular, the proposed device realizes the stable characteristics of multilevel storage, which possesses the potential to be applied to multi-level storage. Through polarization, the resistance of the proposed memristor can be gradually modulated by flipping the ferroelectric domains. Additionally, a plurality of resistance states can be obtained in bidirectional continuous reversibility, which is similar to the changes in synaptic weights. Furthermore, the proposed memristor is able to successfully mimic biological synaptic functions such as long-term depression, long-term potentiation, paired-pulse facilitation, and spike-timing-dependent plasticity. Consequently, it constitutes a promising candidate for a breakthrough in the von Neumann framework.
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