Journal
NPJ QUANTUM INFORMATION
Volume 6, Issue 1, Pages -Publisher
NATURE PORTFOLIO
DOI: 10.1038/s41534-020-00312-y
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Funding
- Hungarian NKFIH grant of the National Excellence Program of Quantum-coherent materials project [KKP129866]
- National Quantum Technology Program [2017-1.2.1-NKP-2017-00001]
- EU H2020 Quantum Technology Flagship project ASTERIQS [820394]
- ERC Synergy grant BioQ [319130]
- EU H2020 Project Hyperdiamond [667192]
- DFG Reinhart Koselleck project
- BMBF via NanoSpin
- BMBF via DiaPol
- INSF [98005028]
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We study the effect of strain on the physical properties of the nitrogen antisite-vacancy pair in hexagonal boron nitride (h-BN), a color center that may be employed as a quantum bit in a two-dimensional material. With group theory and ab initio analysis we show that strong electron-phonon coupling plays a key role in the optical activation of this color center. We find a giant shift on the zero-phonon-line (ZPL) emission of the nitrogen antisite-vacancy pair defect upon applying strain that is typical ofh-BN samples. Our results provide a plausible explanation for the experimental observation of quantum emitters with similar optical properties but widely scattered ZPL wavelengths and the experimentally observed dependence of the ZPL on the strain.
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