Journal
PHOTONICS RESEARCH
Volume 8, Issue 10, Pages 1648-1652Publisher
OPTICAL SOC AMER
DOI: 10.1364/PRJ.401140
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Funding
- National Key Research and Development Program of China [2017YFA0206404, 2018YFB2200501]
- National Natural Science Foundation of China [61534005, 61675195, 61874109, 61975196]
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A high-speed evanescent-coupled Ge waveguide electro-absorption modulator (EAM) with simple fabrication processes was realized on a silicon-on-insulator platform with a 220 nm top Si layer. Selectively grown Ge with a triangle shape was directly used for Ge waveguides of the EAM. An asymmetric p-i-n junction was designed in the Ge waveguide to provide a strong electric field for Franz-Keldysh effect. The insertion loss of the Ge EAM was 6.2 dB at 1610 nm. The EAM showed the high electro-optic bandwidth of 36 GHz at -1 V. Clear open 56 Gbps eye diagrams were observed at 1610 nm with a dynamic extinction ratio of 2.7 dB and dynamic power consumption of 45 fJ/bit for voltage swing of 3V(pp). (C) 2020 Chinese Laser Press
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