Journal
IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS
Volume 8, Issue 3, Pages 3162-3173Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JESTPE.2019.2924241
Keywords
Cracks; fatigue mechanism; lifetime model; lifting-off of Al-wires; materials science
Categories
Funding
- National Key Basic Research Program of China (973 Program) [2015CB251004]
- Key Program of National Natural Science Foundation of China [51490681]
- National Natural Science Foundation of China [51507185]
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Lifting-off of Al bonding wires is one common failure mode of insulated-gate bipolar transistor (IGBT) modules during long-time operation. In the present work, the failure mechanism of Al wires lifting-off was investigated and the major factors were discussed based on both experiments and finite element (FE) simulations. It indicates that lifting-off of Al-wires is mainly determined by the interfacial thermal stress at the bonding interface. Thermal expansion of Al-wires and thermal mismatch of Al-Si interfaces contribute to the interfacial thermal stress which is affected by the resistance heat of Al-wires and power loss of Si-chips. Accordingly, a new lifetime model for the Al wires lifting-off failure mode of IGBT modules is proposed and verified through power cycling tests. The conduction current I-c, the heating time t(ON), and the junction temperature swing Delta T-j are three major factors for the fatigue life model of IGBTs under Al wires lifting-off failure mode.
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