Journal
APL MATERIALS
Volume 8, Issue 9, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/5.0021781
Keywords
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Funding
- Deutsche Forschungsgemeinschaft (DFG) within the research unit FOR 2857 [L0790/7-1, YA 511/2-1, GR 1011/40-1, WE 4620/5-1]
- Universitat Leipzig
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We report pulsed laser deposition being a quite suitable growth method for smooth and transparent p-type copper iodide (CuI) thin films with tailored electrical properties. The film characteristics are strongly influenced by the temperature during growth. Increasing substrate temperatures result in significant improvements in crystallinity compared to deposition at room temperature. In contrast to other growth techniques, the hole carrier density p can be varied systematically between 5 x 10(16) cm(-3) and 1 x 10(19) cm(-3) with hole mobilities up to 20 cm(2)/V s for lowest p. The surfaces exhibit irregularly shaped grains, and the roughness can be decreased down to 1 nm. Furthermore, the samples exhibit high transmittance up to 90% in the visible spectrum. (C) 2020 Author(s).
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