Journal
2D MATERIALS
Volume 8, Issue 1, Pages -Publisher
IOP Publishing Ltd
DOI: 10.1088/2053-1583/abc187
Keywords
two-dimensional materials; electrical characterization; field effect transistor; carrier density; mobility; contact resistivity; trapped charges
Categories
Funding
- Global Research Laboratory (GRL) Program [2016K1A1A2912707]
- National Research Foundation of Korea (NRF)
- National Research Foundation of Korea [2016K1A1A2912707] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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2D materials, with their atomic thinness and rich electronic band structure, show great promise for future nanoelectronics; however, the electrical characterization methods for 2D devices need to be revisited to ensure accuracy and applicability.
Two-dimensional (2D) materials hold great promise for future nanoelectronics as conventional semiconductor technologies face serious limitations in performance and power dissipation for future technology nodes. The atomic thinness of 2D materials enables highly scaled field-effect transistors (FETs) with reduced short-channel effects while maintaining high carrier mobility, essential for high-performance, low-voltage device operations. The richness of their electronic band structure opens up the possibility of using these materials in novel electronic and optoelectronic devices. These applications are strongly dependent on the electrical properties of 2D materials-based FETs. Thus, accurate characterization of important properties such as conductivity, carrier density, mobility, contact resistance, interface trap density, etc is vital for progress in the field. However, electrical characterization methods for 2D devices, particularly FET-related measurement techniques, must be revisited since conventional characterization methods for bulk semiconductor materials often fail in the limit of ultrathin 2D materials. In this paper, we review the common electrical characterization techniques for 2D FETs and the related issues arising from adapting the techniques for use on 2D materials.
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