Journal
NANOMATERIALS
Volume 10, Issue 10, Pages -Publisher
MDPI
DOI: 10.3390/nano10102069
Keywords
HfO2; Al2O3; HfO2 tri-layer RRAM; transparent electrode; multilevel conductance; synaptic properties
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Funding
- National R&D Program through National Research Foundation of Korea (NRF) - Ministry of Science and ICT [2020M3F3A2A01085755]
- National Research Foundation of Korea (NRF) - Ministry of Education [2018R1A6A1A03023788]
- National Research Foundation of Korea [2018R1A6A1A03023788, 2020M3F3A2A01085755, 5199990214693] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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Atomic layer deposited (ALD) HfO2/Al2O3/HfO2 tri-layer resistive random access memory (RRAM) structure has been studied with a transparent indium tin oxide (ITO) transparent electrode. Highly stable and reliable multilevel conductance can be controlled by the set current compliance and reset stop voltage in bipolar resistive switching. Improved gradual resistive switching was achieved because of the interdiffusion in the HfO2/Al2O3 interface where tri-valent Al incorporates with HfO2 and produces HfAlO. The uniformity in bipolar resistive switching with I-on/I-off ratio (>10) and excellent endurance up to >10(3) cycles was achieved. Multilevel conductance levels in potentiation/depression were realized with constant amplitude pulse train and increasing pulse amplitude. Thus, tri-layer structure-based RRAM can be a potential candidate for the synaptic device in neuromorphic computing.
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