4.7 Article

Enhanced Electrochemical Properties and OER Performances by Cu Substitution in NiCo2O4Spinel Structure

Journal

NANOMATERIALS
Volume 10, Issue 9, Pages -

Publisher

MDPI
DOI: 10.3390/nano10091727

Keywords

oxygen evolution reaction; Cu substitution; spinel structure; oxygen vacancy

Funding

  1. Yeungnam University [219A345005]
  2. X-mind Corps program of National Research Foundation of Korea (NRF) - Ministry of Science, ICT [2019H1D8A110563011]
  3. National Research Foundation of Korea [4299990214233, 2019H1D8A1105630, 4120200413687] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)

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In order to improve the electrochemical performance of the NiCo(2)O(4)material, Ni ions were partially substituted with Cu(2+)ions having excellent reducing ability. All of the electrodes were fabricated by growing the Ni(1-x)Cu(x)Co(2)O(4)electrode spinel-structural active materials onto the graphite felt (GF). Five types of electrodes, NiCo2O4/GF, Ni0.875Cu0.125Co2O4/GF, Ni0.75Cu0.25Co2O4/GF, Ni0.625Cu0.375Co2O4/GF, and Ni0.5Cu0.5Co2O4/GF, were prepared for application to the oxygen evolution reaction (OER). As Cu(2+)ions were substituted, the electrochemical performances of the NiCo2O4-based structures were improved, and eventually the OER activities were also greatly increased. In particular, the Ni0.75Cu0.25Co2O4/GF electrode exhibited the best OER activity in a 1.0 M KOH alkaline electrolyte: the cell voltage required to reach a current density of 10 mA cm(-2)was only 1.74 V (eta = 509 mV), and a low Tafel slope of 119 mV dec(-1)was obtained. X-ray photoelectron spectroscopy (XPS) analysis of Ni1-xCuxCo2O4/GF before and after OER revealed that oxygen vacancies are formed around active metals by the insertion of Cu ions, which act as OH-adsorption sites, resulting in high OER activity. Additionally, the stability of the Ni0.75Cu0.25Co2O4/GF electrode was demonstrated through 1000th repeated OER acceleration stability tests with a high faradaic efficiency of 94.3%.

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