Journal
IEEE TRANSACTIONS ON TERAHERTZ SCIENCE AND TECHNOLOGY
Volume 10, Issue 4, Pages 423-426Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TTHZ.2020.2974091
Keywords
Band-pass filters; Through-silicon vias; Resonator filters; Finite element analysis; Metals; Resonators; Scattering parameters; Bandpass; cavity filter; substrate integrated waveguide (SIW); terahertz (THz); through-silicon via (TSV)
Funding
- National Natural Science Foundation of China [61774127, 61771388]
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A miniaturized substrate integrated waveguide bandpass filter with an area of 0.682 x 0.210 mm(2) is proposed based on through-silicon via (TSV) technology for terahertz (THz) applications. The design method of the THz cavity filter based on rectangular TSV is introduced and the filtering characteristics are investigated by the finite element method and the mode matching method. The rectangular TSV is substituted by cylindrical structures and the THz cavity filter is fabricated and measured in order to investigate the possibility of integration with typical three-dimensional integrated circuit manufacturing processes. The cavity filter utilizing cylindrical TSV exhibits a bandwidth of 0.051 THz centered at 0.331 THz, an insertion loss of 1.5 dB, and a reflection of higher than 15 dB in the passband.
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