Determination of Electrical and Photoelectrical Properties of Schottky Diodes Made Using New Chitin Derivatives Synthesized as Interface Layer

5-(2,4-dichlorophenyl)-2-furoic acid and anthraquinone-2-carboxylic acid were reacted separately with chitin. The synthesized products were characterized by various spectroscopic methods (FTIR, NMR and XRD) and were abbreviated as C524D2FA and CA2CA, respectively. The surface of the chitin derivatives, pulverized by pounding in mortar, was examined by SEM technique. Then, two different diodes were made by using these chitin derivatives as an interface layer. Al as metal and p-Si as semiconductor were used in the construction of the diodes. Some important properties of these diodes made were determined both in the dark and under an illumination of 100 mW/cm(2). The Al/CA2CA/p-Si diode has been found to be more ideal than the Al/C524D2FA/p-Si diode conducted in this study and many other diodes made using Al and p-Si in other studies up to now.

Automated summary

The compounds 5-(2,4-dichlorophenyl)-2-furoic acid and anthraquinone-2-carboxylic acid were reacted with chitin to synthesize products characterized by spectroscopic methods. These chitin derivatives were then used as interface layers for the construction of diodes, with the Al/CA2CA/p-Si diode found to be closer to the ideal compared to the Al/C524D2FA/p-Si diode and previous studies using Al and p-Si diodes.