Effects of Channel Dimension and Doping Concentration of Source and Drain Contacts on GNRFET Performance

Growth of the electronic industry has been accompanied by the increasing number of components on a chip. Consequently, it is necessary to shrink device dimension. In this paper, effects of channel dimension reducing of the graphene nanoribbon field effect transistors (GNRFET) on performance of the GNRFET are studied. Also, effects of increasing in source/drain contacts doping concentration of the GNRFET are discussed. In order to device simulation, non-equilibrium Green's function (NEGF) equation is applied for self-consistent solving of Poisson and Schrodinger equations with the tight binding approximation in the mode space and ballistic regime. According to the simulation results, channel length reduction of the GNRFET causes higher values in ON-state and OFF-state currents, transconductance (g(m)), subthreshold swing and drain induced barrier lowering (DIBL). Also, it causes lower values in threshold voltage andI(ON)/I(OFF)ratio. Decreasing in channel width of the GNRFET, causes lower values in ON-state and OFF-state currents, DIBL, subthreshold swing and g(m). Also, it causes higher values inI(ON)/I(OFF)ratio and threshold voltage. Increasing in source/drain contacts doping concentration of the GNRFET causes increasing in ON-state and OFF-state currents, DIBL, subthreshold swing and g(m). Also, it causes decreasing inI(ON)/I(OFF)ratio and threshold voltage. The effects of channel dimension reducing and contacts doping concentration on the transistor performance should be considered for optimal design, fabrication and selection of GNRFETs in various circuits and applications.

Automated summary

This paper investigates the effects of channel dimension reduction and source/drain contacts doping concentration increasing on the performance of graphene nanoribbon field effect transistors (GNRFET). It is found that these factors have different impacts on the ON-state and OFF-state currents, subthreshold swing, transconductance, drain induced barrier lowering, threshold voltage, and I(ON)/I(OFF) ratio of the GNRFET. Consideration of these effects is crucial for optimal design, fabrication, and selection of GNRFETs in various circuits and applications.